Whenever a diode is connected in a Reverse Bias condition, a positive voltage is applied to the N-  type material and a negative voltage is applied to the P-type material. The positive voltage applied to the N-type material draws in electrons towards the positive anode and away from the junction while the openings in the P-type end are additionally drawn in away from the junction  towards the negative cathode.

The net result is that the depletion  layer becomes more extensive because of an absence of electrons and openings and presents a high impedance way, just about a protector. The outcome is that a high potential barrier is made consequently keeping current from coursing through the semiconductor material.

This condition addresses a high resistance to the PN intersection and  zero current courses through the intersection diode with an expansion in predisposition voltage. Notwithstanding, a tiny spillage  current courses through the intersection which can be estimated in miniature amperes, ( μA ).  One last point,assuming that the converse predisposition voltage Vr applied to the diode is expanded to an adequatel  sufficiently high worth, it will make the diode's PN intersection overheat and bomb because of the torrential slide impact   around the intersection. This might make the diode become shorted and will bring about the progression of greatest circuit current, and this displayed as a stage descending incline in the  static characteristics.