nMOSFET as Capacitor- Working
The unit area capacitance is Cox again
Figure 27 shows a plot of CGS vs VGS
Figure 27: CGS vs VGS
Note:
As the size of the Transistor reduces beyond 20 nm, the geometry of the MOSFET device is changed, so that the device still works as a MOS transistor.
One such change is the transfer from 2-D structure to 3-D structure, such a device is called FinFET.
This device performance is good as the length of the channel falls below 20 nm. It has been found that the I-V characteristics of the FinFET are almost square - law, this resembles a large signal model again.
The FinFET consists of:
Vertical Silicon Fin
Oxide Dielectric
Poly Silicon or Metal Gate
Gate voltage controls the current flow from one fin to the other
Figure 28 shows the structure of FinFET
Figure 28: FinFET Structure
Figure 29 below shows the top view of the FinFET, which looks similar to that of a planar MOSFET
Figure 29: Top View of the FinFET
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