Common Source

Introduction of Field Effect Transistors Distinction between a BJT and FET Junction Field Effect Transistor (JFET) N Channel JFET Summary of JFET Operation Mutual or Transfer Characteristic of n-channel JFET Amplification Factor 𝝁 Definition of Parameters p-Channel JFET

Introduction of Metal Oxide Semiconductor Field Effect Transistor - Mosfet Terminals in MOSFET Physical structure of MOSFET MOSFET Working Operation Summary of Operation MOSFET - N Type MOSFET Operation How does Drain current flow MOSFET operation More about Threshold Voltage Current vs Voltage Characteristics - Derivation Non Ideal Current -Voltage Effects or Second Order Effects Short Channel Effects MOSFET Device Capacitances MOSFET Large and Small signal Model pMOSFET Small SIgnal Model To use MOSFET device as a Capacitor nMOSFET as Capacitor- Working

Single Stage Amplifiers Common Source CS Stage with Diode-Connected Load Circuit to measure the Equivalent Resistance Common Drain Stage or Source Follower Common Gate Amplifier Large Signal Behavior Calculation of Input Resistance of a Common Gate Stage

Inverter with Enhancement n- Type MOS as Load Inverter with Linear Enhancement Type Load

Common Source

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Common Source Stage with Resistive Load

As discussed in earlier sections, the transconductance gm of the MOSFET converts the Gate - Source voltage VGS to a small signal change in the Drain current ID. The Drain current ID if passed through a resistor produces a voltage drop across it which is the output voltage.

This configuration is shown in Figure 2.

Figure 2: nMOSFET Common Source Stage with Drain Resistor

Analysis:

If the input voltage Vin is 0V, output Voltage Vout = VDD
As the input voltage Vin increases from 0V and nears the threshold voltage VTH, the transistor turns ON. As the transistor turns ON, current flows in the transistor from the resistor RD and this reduces the output voltage VOUT.
Neglecting channel length modulation, we have
$V_{OUT}=V_{DD}-R_D\frac12\mu_nC_{OX}\frac WL\left(V_{in}-V_{th}\right)^2$
The MOS is operating in saturation region now
As the input voltage Vin increases further, Vout drops more and the MOS transistor still operates in the saturation region.
This continues till the value of the input voltage Vin exceeds the output voltage Vout by the threshold voltage Vth. Let this input voltage be indicated by Vin1.
$V_{in1}-V_{th}=V_{DD}-R_D\frac12\mu_nC_{OX}\frac WL\left(V_{in1}-V_{th}\right)^2$
As Vin becomes greater than Vin, the MOS enters into the triode region.
Any further increase in the input voltage Vin, the MOS is driven into the deep triode region
To prevent the drop of transconductance in the triode region we ensure the operation of the device such that the output voltage Vout is greater than the difference between the input voltage and threshold voltage.
Vout > Vin- Vth
The Voltage Gain Av is given by
Av = -gmRD
If the signal is large i.e. large signal swing, the gain of the circuit changes substantially and now operates in the large signal mode.

The small signal model for the saturation region is shown in Figure 3, below.

Figure 3: Small Signal Model

Note:

The dependence of gain on signal level leads to non linearity.
To reduce nonlinearity, the gain has to be made less dependent on the signal dependent parameters such as gm.

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Common Source

Field Effect Transistors

Field Effect Transistors

Metal Oxide Semiconductor Field Effect Transistor - Mosfet

Metal Oxide Semiconductor Field Effect Transistor - Mosfet

Amplifiers

Amplifiers

Inverters

Inverters

Common Source